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| 600V 8A APT8DQ60K APT8DQ60SA APT8DQ60KG* APT8DQ60SAG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS * Anti-Parallel Diode -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters -Inverters * Snubber Diode * PFC PRODUCT FEATURES * Ultrafast Recovery Times * Soft Recovery Characteristics PRODUCT BENEFITS * Low Losses 1 D2PAK (SA) 2 * Low Noise Switching 1 2 * Cooler Operation * Popular TO-220 Package or Surface Mount D2 PAK Package * Higher Reliability Systems * Low Forward Voltage * Low Leakage Current * Avalanche Energy Rated * Increased System Power Density 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25C unless otherwise specified. APT8DQ60K_SA(G) UNIT 600 Volts Maximum Average Forward Current (TC = 128C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 8 16 110 20 -55 to 175 300 C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 8A VF Forward Voltage IF = 16A IF = 8A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C MIN TYP MAX UNIT 2.0 2.5 1.5 2.4 Volts 25 500 16 MicrosemiWebsite-http://www.microsemi.com 053-4210 Rev G pF 11-2008 A DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 8A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 8A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 8A, diF/dt = -200A/s VR = 400V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN - APT8DQ60K_SA(G) TYP MAX UNIT ns 14 19 17 2 90 160 3 43 250 11 nC Amps ns nC Amps ns nC Amps - THERMAL AND MECHANICAL CHARACTERISTICS Symbol R JC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT C/W oz g 2.7 0.07 Package Weight 1.9 10 lb*in N*m Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 3.0 Z JC, THERMAL IMPEDANCE (C/W) 2.5 D = 0.9 2.0 0.7 1.5 0.5 Note: PDM 1.0 0.3 t1 t2 0.5 0 10-5 0.1 0.05 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (C) TC (C) 1.93 0.773 11-2008 Dissipated Power (Watts) 0.00078 0.0246 053-4210 Rev G ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 30 trr, REVERSE RECOVERY TIME (ns) 120 T = 125C J V = 400V R APT8DQ60K_SA(G) 16A IF, FORWARD CURRENT (A) 25 TJ = 175C 20 100 80 8A 4A 15 TJ = 125C 10 TJ = 25C 5 TJ = -55C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 0 60 40 20 0 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 14 T = 125C J V = 400V Qrr, REVERSE RECOVERY CHARGE (nC) T = 125C J V = 400V 350 300 250 200 150 100 50 0 R 12 10 8 6 R 16A 16A 8A 8A 4 4A 2 0 4A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to X000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 IRRM Qrr trr trr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 20 18 16 14 IF(AV) (A) 12 10 8 6 4 2 Duty cycle = 0.5 T = 175C J 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 60 CJ, JUNCTION CAPACITANCE (pF) 0 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 50 40 30 20 10 0 11-2008 1 053-4210 Rev G 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage APT8DQ60K_SA(G) Vr +18V 0V D.U.T. 30H trr/Qrr Waveform diF /dt Adjust APT6038BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn TO-263 D2 (SA) Package Outline e3 100% Sn Cathode (Heat Sink) 4.45 (.175) 4.57 (.180) 1.27 (.050) 1.32 (.052) 10.06 (.396) 10.31(.406) 1.40 (.055) 1.65 (.065) 7.54 (.297) 7.68 (.303) 0.050 (.002) 0.330 (.013) 0.432 (.017) 0.000 (.000) 0.254 (.010) 2.62 (.103) 2.72 (.107) 1.22 (.048) 1.32 (.052) {3 Plcs.} 8.51 (.335) 8.76(.345) 6.02 (.237) 6.17 (.243) 0.762 (.030) 0.864 (.034) {2 Plcs.} 2.54 (.100) BSC {2 Plcs.} 3.68 (.145) 6.27 (.247) (Base of Lead) Heat Sink (Cathode) and Leads are Plated 11-2008 Anode Cathode Dimensions in Millimeters (Inches) 053-4210 Rev G Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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